FPD Plasma Etch/Ash

Today, to manufacture high-resolution and high-performance displays, the TFT process must become more complex, and higher productivity is required for plasma etch systems.
Betelex™ supports up to 5 process chambers and realize significantly higher productivity with smaller footprint and facility cost.
Betelex™ can also combine multi-process steps in separated chambers and contribute a sophisticated, up-to-date manufacturing process.
Betelex™1800 PICP™ can be applied to etch processes on LTPS (Low-Temperature Poly-Silicon) devices; metal layer (Al, Mo) etch, an insulator layer (SiOx, SiNx) etch, polysilicon layer etch or PR ash.

Features
Multi-chamber system: Maximum 5 chambers
Chamber mode: PICP™ mode
Substrate size:<Standard>
1,500mm x 1,850mm

Impressio™ is a multi-chamber Plasma Etch/Ash system supporting Gen 6 - 10.5 substrates for various applications, small/medium displays for smartphones, and large displays for TVs.
Impressio™ series can be applied to etch processes on LTPS (Low-Temperature Poly-Silicon) devices, oxide semiconductor devices, and amorphous silicon devices; metal layer (Al, Mo) etch, an insulator layer (SiOx, SiNx) etch, silicon layer etch or PR ash.

Features
Multi-chamber system: Maximum 3 chambers
Chamber mode: PICP™ mode/PICP™ Pro mode/ECCP mode
Substrate size:<Standard>
1,500mm x 1,850mm (PICP™)
2,200mm x 2,500mm (PICP™)
2,940mm x 3,370mm (ECCP、PICP™)

As flat panel displays for smartphones and other devices require higher resolutions, ultra-low power consumption, various innovative interfaces, or other new technologies, manufacturing FPD requires a more refined process, higher productivity, and better yield for Plasma Etch/Ash system. Responding to these needs, TEL developed PICP™, which is the plasma source with Innovative Technology and Concept for large FPD Plasma Etch/Ash system. PICP™ can produce extremely uniform high-density plasma on the substrate and significantly improves process uniformity. At the same time, it lowers power consumption by up to 20% or more (compared with previous TEL models), reducing the risk of electrostatic damage to devices and preventing process excursions in mass production.

PICP™ can be applied to etch processes on LTPS (Low-Temperature Poly-Silicon) devices and metal-oxide devices; metal layer (Al, Mo) etch, an insulator layer (SiOx, SiNx) etch, polysilicon layer etch or PR ash.