Etch UNITY™ Series

The long-selling etch system has been receiving a lot of attention from the SiC market

The UNITY™ achieves excellent cost performance for plasma etch process within 200mm wafer, which provides exceptional reliability and productivity. Recent years, the system has a great deal and favorable approval through demonstration of high performance Si/SiC trench etch process for leading-edge power devices manufacturing.

UNITY™ Me+ is a successor to the UNITY™ Me dry etch platform that has received high acclaim for 200mm or smaller wafer processing. The renewal of UNITY™ Me in 2021 has significantly extended the support life for the product. The system can be configured with DRM and SCCM™ chambers for SiO2/SiN etch as well as chambers for Si/SiC trench etch. The system supports 100/150/200mm wafer sizes and has a track record of processing Si wafers as well as LT, LN, and other compound wafers. TEL uses an in-house demo tool to evaluate to solve customers’ process issues and achieve the required performance.

Product comparison

UNITY™ Me+ Si & UNITY™ Me+ SiC
UNITY™ Me+ Si &
Chamber SCCM™ DRM UD
Wafer size
200 100,150,200 100,150,200
Availability New, Certified used New, Certified used
Number of chambers 1-4 1-4
Process Ox, SiN, HM, EB, Contact, Via,
Trench, SAC, Spacer, DD
Trench, EB, TSV
Substrates Si, glass, SiC, sapphire, LN, LT, AlTic Si, SiC, Glass
Safety S2, CE, ROW S2, CE, ROW
Additional sizes w/wafer holder (mm) square 75, square N/A

UNITY and SCCM are is registered trademarks or trademarks of Tokyo Electron Limited in Japan and/or other countries.